Data from: Occurrence of spintronics behaviour (half-metallicity, spin gapless semiconductor and bipolar magnetic semiconductor) depending on the location of oxygen vacancies in BiFe 0.83 Ni 0.17 O 3

Iyyappa Rajan P, Mahalakshmi S, Chandra S

Date Published: May 18, 2017

DOI: http://dx.doi.org/10.5061/dryad.1qs7p

 

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Title input file coordinates of the perfect hexagonal cell BiFe0.83Ni0.17O3
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Description The input file coordinates of hexagonal cell of BiFe0.83Ni0.17O3 are given in the data file. Oxygen atoms were removed from this structure to create oxygen vacancies.
Download input file coordinates of the perfect hex...O3.doc (29.18 Kb)
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Title Fig.2 Total density of states-Raw data
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Description Total density of states data is given in the attached file. These were plotting Fig.2.
Download Fig.2 Total density of states-Raw data.xls (156.6 Kb)
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When using this data, please cite the original publication:

Rajan PI, Mahalakshmi S, Chandra S (2017) Occurrence of spintronics behaviour (half-metallicity, spin gapless semiconductor and bipolar magnetic semiconductor) depending on the location of oxygen vacancies in BiFe 0.83 Ni 0.17 O 3. Royal Society Open Science 4(6): 170273. http://dx.doi.org/10.1098/rsos.170273

Additionally, please cite the Dryad data package:

Iyyappa Rajan P, Mahalakshmi S, Chandra S (2017) Data from: Occurrence of spintronics behaviour (half-metallicity, spin gapless semiconductor and bipolar magnetic semiconductor) depending on the location of oxygen vacancies in BiFe 0.83 Ni 0.17 O 3. Dryad Digital Repository. http://dx.doi.org/10.5061/dryad.1qs7p
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