Observation of a Chern insulator in crystalline ABCA-tetralayer graphene with spin-orbit coupling
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Nov 12, 2024 version files 86.97 MB
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README.md
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Abstract
Degeneracies in multilayer graphene, including spin, valley, and layer degrees of freedom, can be lifted by Coulomb interactions, resulting in rich broken-symmetry states. Here, we report a ferromagnetic state in charge-neutral ABCA-tetralayer graphene driven by proximity-induced spin-orbit coupling from adjacent tungsten diselenide. The ferromagnetic state is identified as a Chern insulator with a Chern number of 4; its maximum Hall resistance reaches 78% quantization at zero magnetic field and is fully quantized at either 0.4 or –1.5 tesla. Three distinct broken-symmetry insulating states, layer-antiferromagnet, Chern insulator, and layer-polarized insulator, along with their transitions, can be continuously tuned by the vertical displacement field. In this system, the magnetic order of the Chern insulator can be switched by three knobs, including magnetic field, electrical doping, and vertical displacement field.
This README.txt file was generated on 2024-02-29 by Yating Sha
Corresponding author information:
Name: Guorui Chen
Institution: School of Physics and Astronomy, Shanghai Jiao Tong University
Address: Room 701, No.5 Building of Sciences, 800 Dongchuan Road, Shanghai, China
Email: chenguorui@sjtu.edu.cn
Description of data
Range of data collection: 3/2023 - 8/2023
Transport measurement
Transport measurements above 1.5 K were performed in an Oxford variable temperature insert (VTI) system. Measurements at 0.1 K were performed in a Leiden dilution refrigerator. Stanford Research Systems SR860, SR830, and Guangzhou Sine Scientific Instrument OE1201 lock-in amplifiers were used to measure the sample resistances with a small AC bias current of 1~10 nA at a low frequency (~17.7 Hz).
Symbols
Vt: Top gate voltages (Volt)
Vb: Bottom gate voltages (Volt)
Vxx: Longitudinal voltage(Volt)
Vxy: Hall voltage (Volt)
Vsd: Source-Drain voltage (Volt)
Isd: Source-Drain current (Amps)
B: Out-of-plane magnetic field (T)
Rxx: Longitudinal resistance (Ohm)
Rxy: Hall resistance (Ohm)
T: Temperature of the probe (Kelvin)
n: Carrier concentration (1E12cm-2)
D: Displacement field (V/nm)
n & D are calculated by the capacidence model as explained in Supplementary Material
Transport measurements above 1.5 K were performed in an Oxford variable temperature insert (VTI) system. Measurements at 0.1 K were performed in a Leiden dilution refrigerator. Stanford Research Systems. SR860, SR830, and Guangzhou Sine Scientific Instrument OE1201 lock-in amplifiers were used to measure the sample resistances with a small ac bias current of 1~10 nA at a low frequency (~17.7 Hz).
Data processing and plotting are mainly carried out in the Origin.