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Influence of annealing atmosphere on performances of CIGS film by sputtering from quaternary targets

Citation

Zhang, Leng; Yu, Yongyi; Yu, Jing; Wei, Yaowei (2020), Influence of annealing atmosphere on performances of CIGS film by sputtering from quaternary targets, Dryad, Dataset, https://doi.org/10.5061/dryad.00000001j

Abstract

Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se2 (CIGS) thin film for photovoltaics. However, the device efficiency without selenization is much lower than that with selenization. To illuminate the issue, we compared the properties of absorbers including the morphology, depth profile, composition, electrical properties and the recombination mechanism comprehensively. The results revealed that the superficial Se of CIGS film annealed in Se-free atmosphere is less than that annealed in Se-containing atmosphere,and the loss of Se reduced the carrier concentration and enhanced the resistivity of CIGS film. Besides, the loss of Se caused the dominant recombination mechanism to be CIGS/CdS interface recombination. The increase of interface recombination was considered to be the reason for the reduced efficiency of the device annealed in Se-free atmosphere.

Methods

The depth direction distributions were measured by secondary ion mass spectroscopy (SIMS, ION-TOF GmbH instrument, TOF.SIMS 5-100) and the sputtering was provided by bismuth primary ion bombardment at 30 keV. The electrical properties were characterized by Hall measurement (Hall, HL5500PC, Nanometric). The temperature dependent J-V measurements were conducted under AM1.5 (100 mW/cm2) illumination using a solar simulator to examining the recombination mechanisms.

Funding

National Natural Science Foundation of China, Award: 61904071

Jinling Institute of Technology High-level Talent Research Startup Fund, Award: jit-b-201822

Jinling Institute of Technology High-level Talent Research Startup Fund, Award: jit-b-201822