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Data from: Carrier density crossover and quasiparticle mass enhancement in a doped 5d Mott insulator

Cite this dataset

Hsu, Yu-Te et al. (2024). Data from: Carrier density crossover and quasiparticle mass enhancement in a doped 5d Mott insulator [Dataset]. Dryad. https://doi.org/10.5061/dryad.79cnp5j4h

Abstract

High-temperature superconductivity in cuprates emerges upon doping the parent Mott insulator. Key features of the low-doped cuprate superconductors include an effective carrier density that tracks the number of doped holes, the emergence of an anisotropic pseudogap that is characterized by disconnected Fermi arcs, and the closure of the gap at a critical doping level. In Sr2IrO4, a spin–orbit-coupled Mott insulator often regarded as a 5d analog of the cuprates, surface probes have also revealed the emergence of an anisotropic pseudogap and Fermi arcs under electron doping. However, neither the corresponding critical doping nor the bulk signatures of pseudogap closure have yet been observed. Here we demonstrate that electron-doped Sr2IrO4 exhibits a critical doping level with a marked crossover in the effective carrier density at low temperatures. This is accompanied by a five-orders-of-magnitude increase in conductivity and a sixfold enhancement in the electronic-specific heat. These collective findings resemble the bulk pseudogap phenomenology in cuprates. However, given that electron-doped Sr2IrO4 is non-superconducting, it suggests that the pseudogap may not be a state of precursor pairing. Therefore, our results narrow the search for the key ingredient underpinning the formation of the superconducting condensate in doped Mott insulators.

README: Source figure data for research article "Carrier density crossover and quasiparticle mass enhancement in a doped 5d Mott insulator"

This dataset contains four Excel files with the raw data used to create the main figures in the manuscript. Variables accompanied by units are contained within the Excel worksheets. The contents of each data file are explained below.

HSU_SourceDataFig1:
Hall resistivity (rho_yx) as a function of the magnetic field at a constant temperature as specified. The first three tabs contained data for three doping levels: x = 0, x = 0.122, and x = 0.196. The fourth tab summarises the calculated Hall coefficient as a function of temperature at a constant magnetic field (8 T) for all the doping levels studied.

HSU_SourceDataFig2:
First tab: resistivity (rhoxx) as a function of temperature (T) for specified doping level (x).
Second tab: Hall mobility (mu_H) versus T for specified doping level (x).
Third tab: conductivity (sigma) extrapolated to 2 K versus doping level (x).
All numbers quoted are in SI units.

HSU_SourceDataFig3:
Specific heat (C/T) as a function of T-squared (T^2) for the doping level specified.

HSU_SourceDataFig4:
Effective Hall carrier density per unit cell (nH*Vuc) and zero-temperature intercept of Specific heat (C/T) versus doping level (x). Corresponding errors are specified with a preceding "d".

Funding

European Research Council, Award: 835279-Catch-22

Swedish Research Council, Award: 2021-04360

Engineering and Physical Sciences Research Council, Award: EP/N034694/1

Engineering and Physical Sciences Research Council, Award: EP/V02986X/1

Dutch Research Council, Award: 16METL01