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Superconducting diode effect under time reversal symmetry

Cite this dataset

Dong, Yu et al. (2024). Superconducting diode effect under time reversal symmetry [Dataset]. Dryad. https://doi.org/10.5061/dryad.wpzgmsbwh

Abstract

In noncentrosymmetric superconductors, superconducting and normal conductions can interchange based on the current flow direction. This effect is termed a superconducting diode effect (SDE), which is a focal point of recent research. The broken inversion and time reversal symmetry is believed to be the requirements of SDE but their intrinsic role has remained elusive. Here, we report strain-controlled SDEs in a layered trigonal superconductor, PbTaSe2. The SDE was found exclusively in a strained device with its absence in an unstrained device, despite that it is allowed in unstrained trigonal structure. Moreover, the zero-field or magnetic field-even (magnetic field-odd) SDE is observed when the strain and current are along armchair (zigzag) direction The results unambiguously demonstrate the intrinsic SDE under time-reversal symmetry and the critical role of strain-induced electric polarization.

README: Superconducting diode effect under time reversal symmetry

https://doi.org/10.5061/dryad.wpzgmsbwh

We have submitted our raw data for all the figures (Liu_SDE_Data.xlsx).

Description of the data and file structure

Liu_SDE_Data.xlsx

Temp: Temperature dependence (K)

Rxx: Longitudinal resistance (Ω)

Voltage: 4 terminal probe voltage (V)

Current: Flowing current value (A)

SHG Data: Raw data of SHG measurement (arb. unit)

Angle: Angle values of linearly polarized light (deg.)

SHGFitting: Fitting results of SHG data (arb. unit)

Field: Values of applied out-of-plane magnetic field (T)

Critical current: Values of critical currents (A)

DeltaI: Values of difference between positive and negative critical currents (A)

DeltaIErrorbar: Errorbars of DeltaI (A)

Null indicates the empty cell because the length of the data set containing null is shorter than other data sets.

Methods

These data were obtained by measurement by sourcemeter and nanovoltmeter, and optical measurement.