Shape-controlled single-crystal growth of InP at low temperatures down to 220 ℃
Cite this dataset
Lien, Der-Hsien et al. (2019). Shape-controlled single-crystal growth of InP at low temperatures down to 220 ℃ [Dataset]. Dryad. https://doi.org/10.6078/D15H5W
III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid phase (TLP) crystal growth method for enabling direct growth of shape-controlled single crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g. 156.6 ºC for indium), previous experiments required a minimum growth temperature of 500 ºC, thus being incompatible with many application-specific substrates. Here, we demonstrate low temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO) coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III-Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.
Electronic Materials Program, funded by Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract, Award: No. DE-AC02-05Ch11231