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Shape-controlled single-crystal growth of InP at low temperatures down to 220 ℃

Citation

Lien, Der-Hsien et al. (2019), Shape-controlled single-crystal growth of InP at low temperatures down to 220 ℃, Dryad, Dataset, https://doi.org/10.6078/D15H5W

Abstract

III-V compound semiconductors are widely used for electronic and optoelectronic applications. However, interfacing III-Vs with other materials has been fundamentally limited by the high growth temperatures and lattice-match requirements of traditional deposition processes. Recently, we developed the templated liquid phase (TLP) crystal growth method for enabling direct growth of shape-controlled single crystal III-Vs on amorphous substrates. Although in theory, the lowest temperature for TLP growth is that of the melting point of the group III metal (e.g. 156.6 ºC for indium), previous experiments required a minimum growth temperature of 500 ºC, thus being incompatible with many application-specific substrates. Here, we demonstrate low temperature TLP (LT-TLP) growth of single-crystalline InP patterns at substrate temperatures down to 220 °C by first activating the precursor, thus enabling the direct growth of InP even on low thermal budget substrates such as plastics and indium-tin-oxide (ITO) coated glass. Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III-Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.

Funding

Electronic Materials Program, funded by Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy under Contract, Award: No. DE-AC02-05Ch11231