README file for the data access Manuscript:Performance analysis and optimization of inverted inorganic CsGeI3 perovskite cells with carbon/copper charge transport materials using SCAPS‑1D Authors: Waqar Ahmad(1), Muhammad Noman(1), Shayan Tariq Jan(1,2), Adnan Daud Khan(1) Affiliation: 1 U.S.-Pakistan Centre for Advanced Studies in Energy, University of Engineering & Technology, Peshawar, Pakistan 2 Department of Energy Engineering Technology, University of Technology, Nowshera, Pakistan Contact Information: Muhammad Noman, Ph. D. Address: Renewable Energy Engineering, U.S. Pakistan Center for Advanced Studies in Energy, UET Peshawar 25000, Pakistan. Phone: +92-333-9177218 E-mail: muhammad.noman@uetpeshawar.edu.pk ORCID IDs:0000-0001-8718-6386 Data and File Overview Total data Files: 7 CVS files: 2 Software: 5 Methodological Information: * Methods of data collection/generation: see manuscript for details Table of Contents Data Results: * Results-Optimization * Structure_Bandalignmenr-Electricfield-Recombination Software files: * CsGeI3-Perovskite * C60-ETL1 * PCBM-ETL2 * CuSbS2-HTL2 * CuSCN-HTL1 The submission includes a total of 7 files. Data Files: The submission has 2 files with extension .xlsx, labeled "Structure Bandalignmenr-Electricfield-Recombination" & "Results-Optimization" can be accessed through Microsoft Excel files. The 1st one titled "Structure Bandalignmenr-Electricfield-Recombination" contains the energy band alignment, electric field and recombination in the cells It has 4 sheets. Each sheet contains results/data from individual structures. The C column labeled "X" shows the thickness of the cell. The D,E,F and G columns show the energy band alignment, Conduction band, fermi level of n-material, fermi level of p-material and valance band respectively. The H column labeled "E" shows the electric field of the cell. The I column labeled "recombination" shows the recombination in the cell. The 2nd file titled "Results-Optimization" contains the remaining results The 2nd sheet shows the layer thickness optimization. Each structure name is mentioned in B column of the sheet (Up to Down). From left to right: Then it shows the absorber layer thickness optimization. The thickness has been increased and effect on cells' performance has been recorded. From the data optimized value(saturation point has been identified) From left to right: It is followed by hole transport layer thickness optimization and electron transport layer optimization. The highlighted row represents the optimized result. Below the first structure is the 2nd structure results presented similarly and so on. The 3rd sheet shows the layer doping optimization. The data is presented similar to sheet 1. The 4th sheet shows the effect of defect density on cells; performance. The data shows increasing the defects in the absorber layer in each structure (Up to down) The 5th sheet shows the effect of interface defects on each layer. The data first shows the effect of HTL/Perovskite interface followed by ETL/Perovskite interface (Up to down) in each structure (Up to down) The 6th sheet shows the effect of increasing working temperature on the performance of each structure (Up to down). The 7th sheet shows the quantum efficiency of each structure. The 1st column shows the wavelength of the optical spectrum, followed by the quantum efficiency of each structure individually (left to right) The 8th sheet shows the IV characteristics of each structure. The 1st column shows the open circuit voltage, followed by the short circuit current of each structure individually (left to right) Software Files: The rest of the five files with extension ".materials", labelled "CsGeI3-Perovskite", "C60-ETL1", "PCBM-ETL2", "CuSbS2-HTL2", and "CuSCN-HTL1" are the numerically modeled layers of the different materials used in the work. They can be accessed with SCAPS-1D software. The different layers can be combined to form the layers used in this work and to replicate it. Thank You