Dataset DOI: 10.5061/dryad.612jm64km

This Dryad package contains the source data (plain-text .txt) used to generate the main-text and Supplemental Material figures in the associated Physical Review Letters article “Orbital-Dependent Coulomb Drag in Electron-Hole Bilayer Graphene Heterostructures.”

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1. Experiment and measurement overview

Device: an electron–hole (e–h) double-layer system formed by two bilayer graphene sheets separated by an insulating hBN barrier (_{3.5 nm). Carrier densities in each bilayer are tuned by top gate voltage (*V}t_{*) and bottom gate voltage (*V}b_{*). An interlayer bias (*V}interlayer~*) is applied between the two bilayer graphene sheets.

Coulomb drag measurement: an AC current I_drive = 1 nA at 17 Hz is driven through the drive layer (top bilayer graphene). Voltages are measured in the drag layer (bottom bilayer graphene) using lock-in techniques.

• Longitudinal drag resistance: R_xx^drag = V_xx / I_drive
• Hall drag resistance: R_xy^drag = V_xy / I_drive

Magnetic-field regime: The main drag maps shown in Figs. 2–4 are taken in the quantum Hall regime at B = 10 T and T ≈ 10 mK. Some Supplemental characterization data are taken at other fields (noted below per figure).

Vertical displacement field: Many phenomena discussed are organized by the effective vertical displacement field D (in V/nm). In Fig. 4 the approximate D value used for each panel is given in the panel label.

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2. File structure

All source data are contained in:

File: Source_data.zip

The zip archive contains two top-level directories:

• Main Figures/
• Supplemental Materials Figures/

Each directory contains subfolders for individual figures, named by the figure number/caption.

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3. Data format conventions

3.1 Line-plot files (2 columns)

• Column 1: x-axis values
• Column 2: y-axis values

3.2 Two-dimensional (2D) color-plot files (3 or 4 columns)

Most 2D maps are stored as lists of points:

• Column 1: x-coordinate
• Column 2: y-coordinate
• Column 3 (and sometimes Column 4): measured value(s) to be plotted as color scale

Units:

• Voltages (V_t, V_b, V_interlayer) are in V
• Displacement field D is in V/nm
• Resistances are in kΩ, unless stated otherwise

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4. Main-text figures

Figure 2 — Landau-level structure and global drag maps (B = 10 T, T ≈ 10 mK, V_interlayer = 0.2 V)

Figure 2 introduces the orbital (Landau-level) structure of bilayer graphene under a vertical displacement field and connects it to Coulomb drag signatures. Panels (a)–(b) are schematic/expected patterns. Panels (c)–(d) show the measured longitudinal and Hall drag resistance maps over a broad (V_b, V_t) range.

Data file: Main Figures/Figure 2/Fig.2 raw data.txt
Two-dimensional color plots of longitudinal and Hall drag as functions of gate voltages.

• Column 1: V_b (x-axis) in V
• Column 2: V_t (y-axis) in V
• Column 3: R_xx^drag (color scale for Fig. 2c)
• Column 4: R_xy^drag (color scale for Fig. 2d)

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Figure 3 — Zoom-in of two N = 1 Hall-drag features and line cuts (B = 10 T, T ≈ 10 mK, V_interlayer = 0.2 V)

Figure 3 zooms into two circled regions from the global Hall-drag map (Fig. 2d) where strong negative Hall drag appears when both layers occupy N = 1 Landau levels at specific filling-factor combinations.

• Panels (a) and (c) are zoomed 2D maps centered at (νb, νt) = (1.5, −0.5) and (3.5, −0.5), respectively.
• Panels (b) and (d) are horizontal line cuts through (a) and (c), showing the Hall-drag peak amplitude along the indicated dashed lines. Insets indicate the relevant N = 1 LLs responsible for the signals.

Data files: Main Figures/Figure 3/

• Fig.3a raw data.txt (2D map near (1.5, −0.5))
  • Column 1: V_b (V)
  • Column 2: Vt (V)
  • Column 3: R_xy^drag
• Fig.3b raw data.txt (line cut of Fig. 3a)
  • Column 1: V_b (V)
  • Column 2: R_xy^drag
• Fig.3c raw data.txt (2D map near (3.5, −0.5))
  • Column 1: V_b (V)
  • Column 2: V_t (V)
  • Column 3: R_xy^drag
• Fig.3d raw data.txt (line cut of Fig. 3c)
  • Column 1: V_b (V)
  • Column 2: R_xy^drag

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Figure 4 — Evolution of Hall drag with increasing interlayer bias / displacement field D (B = 10 T, T ≈ 10 mK)

Figure 4 tracks how the Hall-drag landscape evolves as the effective vertical displacement field D is increased.

• Panels (a)–(e) are 2D color plots of R_xy^drag(V_b, V_t) at increasing V_interlayer = 0.2, 0.4, 0.6, 0.8, 1.0 V (with approximate D ≈ 0.19, 0.38, 0.57, 0.75, 0.94 V/nm, respectively, as labeled in the figure).
• The strong N = 1 ↔ N = 1 Hall-drag features weaken with increasing D, and at larger D a new Hall-drag feature emerges consistent with drag between N = 1 and N = 0 Landau levels.

Data files: Main Figures/Figure 4/
For all files below:

• Column 1: V_b (V)
• Column 2: V_t (V)
• Column 3: R_xy^drag
• Fig.4a raw data.txt — Fig. 4a, V_interlayer = 0.2 V (D ≈ 0.19 V/nm)
• Fig.4b raw data.txt — Fig. 4b, V_interlayer = 0.4 V (D ≈ 0.38 V/nm)
• Fig.4c raw data.txt — Fig. 4c, V_interlayer = 0.6 V (D ≈ 0.57 V/nm)
• Fig.4d raw data.txt — Fig. 4d, V_interlayer = 0.8 V (D ≈ 0.75 V/nm)
• Fig.4e raw data.txt — Fig. 4e, V_interlayer = 1.0 V (D ≈ 0.94 V/nm)

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5. Supplemental Material figures

Figure S1 — Layer-resolved longitudinal resistance maps and line cuts (device characterization)

Figure S1 provides device characterization for the individual bilayer graphene layers: longitudinal resistance maps versus gate voltages, along with representative line cuts.

Data files: Supplemental Materials Figures/Figure S1/

• Fig.S1a.txt — 2D map of top bilayer graphene longitudinal resistance vs (V_b, V_t)
  • Column 1: V_b (V)
  • Column 2: V_t (V)
  • Column 3: longitudinal resistance (top layer)
• Fig.S1b.txt — vertical line cut of Fig. S1a at V_b = −2 V
  • Column 1: V_t (V)
  • Column 2: longitudinal resistance (top layer)
• Fig.S1c.txt — 2D map of bottom bilayer graphene longitudinal resistance vs (V_b, V_t)
  • Column 1: V_b (V)
  • Column 2: V_t (V)
  • Column 3: longitudinal resistance (bottom layer)
• Fig.S1d.txt — horizontal line cut of Fig. S1c at V_t = −2 V
  • Column 1: V_b (V)
  • Column 2: longitudinal resistance (bottom layer)

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Figure S2 — Landau fan diagram of the top bilayer graphene

Figure S2 shows a Landau fan diagram (longitudinal resistance vs gate voltage and magnetic field) for the top bilayer graphene.

Data file: Supplemental Materials Figures/Figure S2/Fig.S2 raw data.txt

• Column 1: V_t (V)
• Column 2: magnetic field B (T)
• Column 3: longitudinal resistance (top layer)

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Figure S3 — Longitudinal and Hall resistance of the bottom bilayer graphene at B = 1 T

Figure S3 provides a 1D transport characterization of the bottom bilayer graphene: longitudinal and Hall resistance as a function of bottom-gate voltage at B = 1 T.

Data file: Supplemental Materials Figures/Figure S3/Fig.S3 raw data.txt

• Column 1: V_b (V)
• Column 2: longitudinal resistance (bottom layer)
• Column 3: Hall resistance (bottom layer)