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Data from: Direct determination of 3C/4H silicon carbide heterophase interfaces by electron ptychography

Kim, Junghwa1; Harmon, Katherine2; Heremans, F. Joseph2; Delegan, Nazar2; Highland, Matthew2; Hruszkewycz, Stephan2; LeBeau, James1

Published Jul 31, 2026 on Dryad. https://doi.org/10.5061/dryad.7sqv9s56c

Data files

Jul 31, 2026 version files 4.94 GB

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Abstract

By tuning the growth conditions of silicon carbide during chemical vapor deposition, abrupt interfaces between polymorphs can be created. Because of differences in local bonding, determining the structure of these interfaces provides important insights into predicting and ultimately controlling material properties. Here, we use multislice electron ptychography (MEP) to qualitatively and quantitatively analyze interfaces between 3C and 4H silicon carbide in three dimensions. Two distinct interfaces are investigated: a coherent interface between (1-11)3C and the basal plane of 4H, and an incoherent interface between (1-12)3C and the prismatic 4H plane. For the coherent interface, MEP enables direct quantification of a sharp boundary exhibiting an inclined step, while for the incoherent interface, local atomic displacements are determined along dislocation cores. By quantifying the spatial distribution and atomic-scale structure of these interfaces in three dimensions, this study provides comprehensive insight into the complexity of silicon carbide heteropolytype interfaces, paving the way for targeted interface engineering based on theoretical modeling of observed structural models.