Data from: Terahertz sensing based on the nonlinear electrodynamics of the two-dimensional correlated topological semimetal TaIrTe4
Data files
Jun 05, 2025 version files 16.37 MB
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Figure1.xlsx
5 MB
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Figure2.xlsx
41.29 KB
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Figure3.xlsx
41.12 KB
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Figure4.xlsx
52.48 KB
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README.md
5.48 KB
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SI_SourceData.xlsx
11.23 MB
Abstract
The development of terahertz (THz) sensing technologies is limited by the lack of sensitive, broadband, and fast terahertz detectors. Thermal bolometers are bulky and slow, whereas electronic terahertz detectors (such as Schottky diodes) are fast, but their sensitivity degrades quickly outside a narrow frequency window. Here, we show that a two-dimensional correlated topological semimetal, tantalum iridium telluride (TaIrTe4), has a large room temperature nonlinear Hall effect, and that the interaction between this effect and terahertz nonlinear electrodynamics can be used as a mechanism for terahertz sensing. Our photodetectors exhibit a high sensitivity (noise equivalent power of around 1 pW Hz-1/2) and a large zero-bias responsivity (around 0.3 A W-1) a broadband spectral range (0.1–10 THz) at room temperature with intrinsic ultrafast response time (around ps). The zero-bias responsivity and noise equivalent power performance can be further improved (to 18 A W-1 and 0.05 pW Hz-1/2, respectively) by introducing gate-tunable electron correlations.
Dataset DOI: 10.5061/dryad.d7wm37qcg
Description of the data and file structure
This dataset contains:
- Optical measurements of sample TaIrTe4 with methods including Second Harmonic Generation, Raman Spectroscopy and Linear Dichroism.
- Transport measurement of sample TaIrTe4
- Optoelectronics measurement of TaIrTe4. Photovoltage was collected when sample was exposed to THz wave, infrared laser and visible laser.
- Calculations of Berry Curvature Dipole and band structure of TairTe4 based on first principle calculations.
The experimental and theoretical study aimed to reveal the THz sensing capability and characterize the correlated state.
Files and variables
File: Figure2.xlsx
Description: This file contains all file used for analyzing Figure2, characterizing device performance at room temperature.
Variables
- Power Density: Power density used for THz photovoltage measurements; Unit: mW/cm^2
- V^d.c.: Measured d.c. photovoltage; Unit: Volt (V)
- Material: material type measured; Graphene and Tairte4 (from 50-Layer to 2-layer);
- Responsivity: measured and calculated responsivity of device; Unit: A/W
- Frequency: frequency of NEP measurement; Unit: Hertz (Hz)
- NEP: noise equivalent power; Unit: W Hz^(-1/2)
- Angle: Polarization Angle of the incident THz wave; Unit: degree (deg)
- Vb: Photovoltage measured along crystalline b axis; Unit: arbitrary units
- Va: Photovoltage measured along crystalline a axis; Unit: arbitrary units
- Frequency range: the range of the wave source frequency; Unit: THz
- Responsivity: measured and calculated responsivity of device; Unit: A/W
- Time: time delay setting in the pump-probe/autocorrelation measurement; Unit: picosecond (ps)
- Vb: measured photovoltages; unit: arbitrary unit
File: Figure3.xlsx
Description: This file contains all file used for analyzing Figure3, characterizing device performance at varying temperature.
Variables
- Temperature: Measurement temperature; Unit: K
- Responsivity: measured and calculated responsivity of device; Unit: A/W
- Phase: Measured photovoltage phase; Unit: degree (deg)
- Frequency: frequency of NEP measurement; Unit: Hertz (Hz)
- NEP: noise equivalent power; Unit: W Hz^(-1/2)
- R: measured resistance of sample; Unit Ohm (Ω)
- dR/dT: First derivative of Resistance against temperature; Unit: Ohm/Kelvin (Ω/K)
- SHG intensity: Measured SHG intensity using photocounter; Unit: Count.
- Angle: Incident THz wave polarization angle; Unit: degree (deg)
- Photovoltage: measured photovoltage; Unit :arbitrary unit
File: Figure1.xlsx
Description: This file contains all data used for analyzing Figure1, including basic characterizations and calculation
Variables
- Angle: incident polarization angle of 1040nm laser to excite SHG signal; Unit: degree (deg)
- Normalized Intensity: normalized SHG intensity; Unit: arbitrary unit
- I : applied a.c. current for Nonlinear Hall measurements; Unit: micro Ampere (uA)
- V^2w: Measured nonlinear hall voltage at doubled frequency 2w; Unit: Volt (V)
- kx/ky: wave vecor in k space; Unit: 2pi/a / 2pi/b (where a and b are lattice constants)
- BCD : Berry curvature distribution in k space; Unit: Angstrom^3
File: Figure4.xlsx
Description: This file contains all data used for analyzing Figure4, including the in-situ controlled measurements
Variables
- Temperature: Sample temperature; Unit: Kelvin (K)
- Voltage: Applied Gate Voltage; Unit: Volt (V)
- Responsivity: measured and calculated responsivity of device; Unit: A/W
- Phase: Measured photovoltage phase; Unit: degree (deg)
- Material/Devices: showing the source of data which originates from different materials or devices at different working temperature
File: SI_SourceData.xlsx
Description: This file contains all data used for analyzing Supplementary Information.
Variables
- Raman Shift: wavenumbers of Raman signal shifted from Reighley peak; Unit: cm^-1
- Intensity: Intensity of Raman peaks measured with examination polarization along crystalline b and a axis; Unit: arbitrary unit
- Thickness: The thickness measured by AFM; Unit: meter (m)
- k: wave vector; Unit: (2pi/a)
- Energy: Energy of the electronic state of dispersion; Unit: eV
- Resistivity: The measured resistivity of sample; Unit: uOhm`cm
- Conductivity: Measured conductivity of device; Unit: S2 cm2
- Nonlinear Efficiency: the ratio between measured nonlinear hall voltage and appied voltage
- width/length: geometric scale of mapping; Unit: milimeter (mm)
- Intensity: Measured intensity; Unit: arbitrary unit
- B: Magnetic Field; Unit: Oe
- Vab: VOltage between a and b axis end; Unit: uV
- Time: time delay of pump-probe measurement; Unit: picoseconds (ps)
- ETHz: electrical field of THz; Unit: arbitrary Units
- Dac: Berrycurvature distribution in k-space; Unit: Angstrom^3
- LD: Linear Dichroism; Unit (%)
- Phase: Measured photovoltage phase; Unit: degree (deg)
- Temperature: Sample temperature; Unit: Kelvin (K)
- Voltage: Applied Gate Voltage; Unit: Volt (V)
Code/software
- Microsoft Excel (Version 2010 or later) – To view and analyze the all xlsx files.
Access information
Other publicly accessible locations of the data:
- NA
Data was derived from the following sources:
- NA
