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Data from: Role of copper doping in modulating the thermoelectric properties of Eu11Zn4Sn2As12

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Jun 04, 2026 version files 104.44 KB

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Abstract

Eu11Zn4Sn2As12 is a p-type semiconductor that has been proposed to undergo 3D-to-2D electronic transport as the carrier concentration increases. This commensurately modulated structure in space group R3̅m has been shown to improve its thermoelectric properties upon Na doping, concurrently decreasing electrical resistivity while maintaining a large Seebeck coefficient. In this study, Eu11Zn4Sn2As12 was doped with Cu with the goal of substituting in the [Zn2As3]5− defect hexagonal layers to improve electrical transport. Thermal conductivity, carrier concentration, mobility, electrical resistivity, and the Seebeck coefficients as a function of temperature from 300 to 600 K were measured as a function of Cu content. A maximum zT600K of 0.24 for Eu11Zn4-xCuxSn2As12, x = 0.6, was reached.