Data from: Evaluating the influence of novel charge transport materials on the photovoltaic properties of MASnI3 solar cells
Data files
Jan 16, 2024 version files 223.94 KB
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README.md
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Results.xlsx
Abstract
In recent decades, substantial advancements have been made in photovoltaic technologies, leading to impressive power conversion efficiencies exceeding 25% in perovskite solar cells (PSCs). Tin-based perovskite materials, characterized by their low band gap (1.3 eV), exceptional optical absorption, and high carrier mobility, have emerged as promising absorber layers in PSCs. Achieving high performance and stability in PSCs critically depends on the careful selection of suitable charge transport layers (CTLs). This research investigates the effects of five copper-based hole transport materials and two carbon-based electron transport materials in combination with methyl ammonium tin iodide (MASnI3). The carbon-based CTLs exhibit excellent thermal conductivity and mechanical strength, while the copper-based CTLs demonstrate high electrical conductivity. The study comprehensively analyzes the influence of these CTLs on PSC performance, including band alignment, quantum efficiency, thickness, doping concentration, defects, and thermal stability. Furthermore, a comparative analysis is conducted on PSC structures employing both p-i-n and n-i-p configurations. The highest-performing PSCs are observed in the inverted structures of CuSCN/MASnI3/C60 and CuAlO2/MASnI3/C60, achieving power conversion efficiencies (PCE) of 23.48% and 25.18%, respectively. Notably, the planar structures of Cu2O/MASnI3/C60 and CuSbS2/MASnI3/C60 also exhibit substantial PCE, reaching 20.67% and 20.70%, respectively.
README: Evaluating the influence of novel charge transport materials on the photovoltaic properties of MASnI3 solar cells
https://doi.org/10.5061/dryad.z34tmpgkx
Manuscript: Evaluating the Influence of Novel Charge Transport Materials on the Photovoltaic Properties of MASnI3 Solar Cells
Authors: Khalid Afridi (1), Muhammad Noman(1), Shayan Tariq Jan(1,2)
Affiliation: 1 U.S.-Pakistan Centre for Advanced Studies in Energy, University of Engineering & Technology, Peshawar, Pakistan
2 Department of Energy Engineering Technology, University of Technology, Nowshera, Pakistan
Contact Information: Muhammad Noman, Ph. D.
Address: Renewable Energy Engineering, U.S. Pakistan Center for Advanced Studies in Energy, UET Peshawar 25000, Pakistan.
Phone: +92-333-9177218
E-mail: muhammad.noman@uetpeshawar.edu.pk
ORCID IDs:0000-0001-8718-6386
Data and File Overview
Total data Files: 1
CVS files: 1
Methodological Information:
* Methods of data collection/generation: see manuscript for details.
Table of Contents
Data Results:
* Data
SCAPS-1D software was used to generate the data.
The submission includes a total of 1 files.
Data File:
The submission has 1 files with extension .xlsx, labelled "Results" can be accessed through microsoft excel files.
The Data file has 17 sheets. Each sheet shows the specific result of perofrmance for all the structures
The 1st sheet showa the Quantum Efficiency data of the structures.
The 2nd sheet shows the IV characterization.
The 3rd sheet show the electric potentail at HTL/Perovskite interface
The 4th sheet shows the electric potential at ETL/Perovskite interface
The 5th sheet shows the heterojunction recombiation at HTL/Perovskite
The 6th sheet shows the qheterojunction recombiation at ETL/Perovskite
The 7th sheet shows the effect of interface defects at HTL/Perovskite
The 8th sheet shows the effect of interface defects at ETL/Perovskite
The 9th sheet shows the effect of absorber thickness
The 10th sheet shows the effect of ETL Thickness
The 11th sheet shows the effect of HTL Thickness
The 12th sheet shows the effect of absorber doping
The 13th sheet shows the effect of ETL doping
The 14th sheet shows the effect of HTL doping
The 15th sheet shows the effect of bulk defect density
The 16th sheet shows the effect of metal work function
The 17th sheet shows the effect of temperature
Nomenclature
PSC: Perovskite Solar Cell
MASnI3: methyl ammonium tin iodide
HTL: Hole Transport Layer
ETL: Electron Transport Layer
CTL: Charge Transport Layer
FTO: Fluorine-doped tin iodide
CB: Conduction Band
VB: Valance Band
CBO: Conduction Band Offset
VBO: Valance Band Offset
Eg: Band Gap
PCE: Power Conversion Efficieny
Jsc: Short Circuit Current
Voc: Open Circuit Voltage
FF: Fill Factor
QE: Quantum Efficiency
NA and ND: the concentration of the acceptor and donor
ψ: electrostatic potential
p and n: number of holes and electrons;
Jp and Jn: the current density of holes and electrons
G(x): optical generation
R p(x) and R n(x): the rate of recombination of holes and electrons.
Dn: the diffusion coefficient for electrons
Dp: the diffusion coefficient for holes
Nt: Defect Density
IF: Interface defects
WF: Work Function
x(um): Thickness of material
bp 1: interface defects density
PCBM: fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester.
Units:
nm: Nano meter
cm: Centi meter
um: micro meter
eV: Electron Volt
s: second
V: volt
A: Ampere